Eintrag weiter verarbeiten

Low-k SiCxNy Etch-Stop/Diffusion Barrier Films for Back-End Interconnect Applications

Gespeichert in:

Bibliographische Detailangaben
Personen und Körperschaften: Leu, Jihperng, Tu, H.E, Chang, W.Y, Chang, C.Y, Chen, Y.C, Chen, W.C, Zhou, H.Y
Titel: Low-k SiCxNy Etch-Stop/Diffusion Barrier Films for Back-End Interconnect Applications
Format: E-Book
Sprache: Englisch
veröffentlicht:
Chemnitz Technische Universität Chemnitz
Online-Ausg.. 2016
Gesamtaufnahme: Low-k SiCxNy Etch-Stop/Diffusion Barrier Films for Back-End Interconnect Applications; AMC 2015 – Advanced Metallization Conference
Schlagwörter:
Quelle: Qucosa
Details
Zusammenfassung: Lower k and low-leakage silicon carbonitride (SiCxNy ) films were fabricated using single precursor by using radio-frequency (RF) plasma-enhanced chemical vapor deposition (PECVD). We explored precursors with (1) cyclic-carbon-containing structures, (2) higher C/Si ratio, (3) multiple vinyl groups, as well as (4) the incorporation of porogen for developing low-k SiCxNy films as etch-stop/diffusion barrier (ES/DB) layer for copper interconnects in this study. SiCxNy films with k values between 3.0 and 3.5 were fabricated at T≦ 200 o C, and k~4.0-4.5 at 300-400 °C. Precursors with vinyl groups yielded SiCxNy films with low leakage, excellent optical transmittance and high mechanical strength due to the formation of cross-linked Si-(CH2)n-Si linkages.